Abstract
We investigate the effects of thickness as well as dielectric constant of buried oxide on the digital performance of 30 nm germanium-on-insulator (GeOI) MOSFETs employing extensive TCAD simulation. Furthermore the role of Ge channel thickness on various device metrics is studied. For a GeOI pMOSFET having 10-nm thick channel we obtain the lowest value of subthreshold slope, OFF-current, and the highest value of threshold voltage and ON-to-OFF current ratio using 20-nm thick Air as the BOX insulator whereas the lowest intrinsic delay of 5.79 ns is obtained using HfO2 BOX thickness of 200 nm. Moreover, subthreshold slope and OFF-current can further be reduced concurrently improving threshold voltage and ON-to-OFF current ratio by thinning down the channel at the cost of increase in intrinsic delay.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
