Abstract
HighlightsOxygen-vacancy-rich SiC@MoO3 nanocomposite with strong reflection loss (− 50.49 dB at 1.27 mm thickness) and broadband absorption band (8.72 GHz at 2.68 mm thickness) were constructed via in situ etching strategy.The presence of oxygen vacancy leads to an increased conductive loss and defect-induced dipole polarization, which plays significant role in attenuating the incident electromagnetic wave.
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