Abstract
An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.
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