Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber

Abstract

Copper phthalocyanine (CuPc)-based thin film transistors were fabricated using CuPc films grown under different deposition pressure (Pdep) (ranging from 1.8×10−4Pa to 1.0×10−1Pa). The transistor performance highly depended on Pdep. A field-effect mobility of 2.1×10−2cm2/(Vs) was achieved under 1.0×10−1Pa. Detailed investigations revealed that Pdep modulates the molecular packing and orientation of the organic films grown on a SiO2/Si substrate and influences the charge transport. Furthermore, from a device physics point of view, contact resistance of the fabricated transistors decreased when Pdep increased, which was beneficial in reducing energy consumption.