Abstract
Abstract Measurements of Xe(M)-radiation induced by Xe-ion bombardment of copper crystals were camcd out for the energy-range 80-200 keV. In the case of unimplanted copper targets the x-ray yields in low indicated directions have minima, whereas for Xe-implanted copper targets in the same directions at an energy of the order of 140 keV appear maxima, which increase with decreasing bombardment energy. It was shown that these enhancements are caused not by the flux-peaking effect of orientation department enrichment of Xe-ions in copper crystals, but by the angular dependence of the stopping power of Xe-ions under Channelling conditions. Calculations of the angular dependence of the x-ray yield are carried out by means of a theoretical model, which takes into account flux distribution and energy losses of Xe-ions in copper crystals. The calculated results are in good agreement with the measurements.
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