Abstract
The reliability of high electron mobility transistors (HEMTs) significantly depends on the stability of the gate Schottky contact to the semiconductor. Gate sinking during the fabrication and device operation alters transconductance, gate capacitance, and threshold voltage, which are crucial device parameters for modeling HEMT devices and designing circuits. In particular for enhancement-mode InAlAs/InGaAs/InP HEMTs (eHEMTs) where thermally-treated Pt is utilized as the gate metallization, thermal stability has always constituted a problem due to the diffusion of Pt. Although aspects of this diffusion are utilized to enhance e-mode behavior, no quantitative measurements have been conducted to estimate the diffusion depth of Pt in InAlAs. Further, it would be preferable to develop a metallization scheme where the Schottky contact barrier height is similar to that of Pt but with a much lower diffusivity. To this end, we have developed a gate metal structure based on Ir for InAlAs/InGaAs/InP HEMTs and investigated its thermal stability in comparison to the conventional Pt-based contact. A 0.15 um-gatelength eHEMT utilizing Ir/Ti/Pt/Au gate was fabricated to demonstrate the potential of Ir-based gate technology
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
