Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Yen-Ku Lin,Chia-Ching Huang,Seiji Samukawa,Ruey-Bor Lee,Shuichi Noda,Quang Ho Luc,Edward Yi Chang

doi:10.1109/nano.2016.7751501

Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Yen-Ku Lin, Chia-Ching Huang + Show 5 more

https://doi.org/10.1109/nano.2016.7751501

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Publication Date: Aug 1, 2016

Citations: 3

Affiliation: Tohoku University, National Yang Ming Chiao Tung University

#Neutral Beam Etched #Inductively Coupled Plasma-reactive-ion Etching + Show 8 more

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Abstract

An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al 2 O 3 /AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I–V curve.

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