Abstract
AbstractHigh performance enhancement‐mode AlGaN/GaN HEMTs (E‐HEMTs) were demonstrated with samples grown on low‐cost silicon substrate for the first time. The fabrication process is based on fluoride‐based plasma treatment of the gate region and post‐gate annealing at 450 °C. The fabricated E‐HEMTs have nearly the same peak transconductance (Gm) and cut‐off frequencies as the conventional depletion‐mode HEMTs (D‐HEMTs) fabricated on the same wafer, suggesting little mobility degradation caused by the plasma treatment. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
