Abstract
Second-harmonic (SH) radiation generated in reflection is measured from the surface of a two-dimensional triangular photonic crystal in a GaN layer. A very large SH enhancement is observed when the incident radiation is resonant with a leaky photonic mode. The potential of second-harmonic generation as a tool for photonic band mapping is also envisaged. The extended transparency window of III-nitride wide band gap semiconductors coupled with large nonlinearities is an appealing feature pointing toward light control and manipulation in photonic structures.
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