Abstract
Zinc oxide (ZnO) nanowires (NWs) are gaining importance in optoelectronics because of their excellent electrical and optical properties. However, defects in the NW structure leads to suppression of the near-band-edge (NBE) ultraviolet (UV) emission, limiting their full potential for applications in optoelectronic devices. In this work, we present enhancement in NBE emission and bandgap modulation in ZnO NWs hydrothermally grown on sputtered Al-ZnO (AZO) films. Al dopant incorporation and post-synthesis thermal annealing are found to increase the NBE emission. Compared to Al-doping, the post-growth annealing produces a more significant enhancement in the NBE emission and a substantial increase of 34.5 meV in the optical bandgap, along with suppression of defect-related deep level emissions caused by oxygen vacancies and interstitials. This further improves the applicability of the ZnO NWs in stable, room temperature emission devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
