Abstract
Both electrical conductivity and Seebeck coefficient of sputtered Bi–Sb–Te films were enhanced by introducing a high density of electric current through the films during thermal annealing. The electrically stressed Bi–Sb–Te films were found to have lower carrier concentration but much higher mobility than the films thermally treated at the same temperatures. A mechanism based on electromigration-induced preferential Sb diffusion is proposed to explain the observed electrical transport properties and precipitation of Sb-rich phase in the electrically stressed Bi–Sb–Te films. The study shall lead to an effective strategy of improving thermoelectric properties of Bi–Sb–Te films by electric current stressing.
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