Abstract
AbstractWe report the optimization of Bi–Sb–Te thermoelectric nanowires by electrodeposition. We show that stoichiometric Bi0.5Sb1.5Te3 nanowires have the highest Seebeck coefficient. The pulse‐deposited Bi0.5Sb1.5Te3 nanowires have a more uniform growth front and a high crystallinity and, thus, a larger electrical and thermal conductivity than those of direct current (DC)‐deposited nanowires. The pulse‐deposited nanowires also have a high Seebeck coefficient as they have a more homogeneous distribution of the elements. The figure of merit of the pulse‐deposited single Bi0.5Sb1.5Te3 nanowires can be as high as 1.14 at 330 K and is approximately 54 % higher than that of the DC‐deposited nanowires.
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