Abstract
In this paper, TiNiSn1-xSbx thermoelectric bulks were fabricated by microwave synthesis combined with spark plasma sintering and annealing process. The high density of the samples were confirmed by the physical phase analysis and microstructure characterization of the samples. Through the analysis of the thermoelectric properties of the samples, it was determined that the antimony doping and the annealing process resulted in a significant improvement in the electrical properties of the TiNiSn-based materials, and allowed the samples to maintain relatively low lattice thermal conductivity. At the same time, the lattice thermal conductivity of all samples is less than 1.7 W m−1K−1 at high temperature. TiNiSn0.965Sb0.035 obtained a maximum power factor of 3125.9 μW m−1K−2 at 873 K and a total thermal conductivity of 4.2–4.7 W m−1K−1, with the maximum ZT value of 0.57, which is ∼86% higher than that of the undoped sample.
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