Abstract
The effect of a small amount of Pt (5 at. %) on the thermal stability of NiSi film on (100) and (111) Si substrates has been investigated both by in situ annealing inside an x-ray photoelectron spectroscopy system and by ex situ rapid thermal annealing. The addition of platinum increases the disilicide nucleation temperature to 900 °C leading to a better stability of NiSi at high temperatures. In the presence of Pt, NiSi films on both (111)Si and (100)Si substrates develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si. The increase in thermal stability has been explained in terms of the nucleation concept.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
