Abstract
We have systematically investigated the material and electrical properties of yttrium-doped GeO2 (Y-GeO2) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO2/Ge stack, compared to that of pure GeO2/Ge stack. The excellent electrical properties of Y-GeO2/Ge stacks with low Dit were presented as well as enhancement of dielectric constant in Y-GeO2 layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO2.
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