Abstract
Infrared absorption at 10 K of oxygen-rich Ge crystals after irradiation with fast electrons ( E=4 MeV, T≈100°C) and subsequent annealing at 220–420°C has been studied. It is found that upon heat-treatments of the irradiated samples at 220–280°C the simultaneous formation of four bistable thermal donors (TD1–TD4) occurs. This process is not accompanied by detectable changes in intensities of absorption bands at 780.4 and 818.0 cm −1, which are related to the oxygen dimer. Upon following anneals of the samples at 300–420°C, the strongly enhanced generation of the higher order TDs is observed with a simultaneous decrease in intensities of the bands originated from the oxygen dimer, TD1 and TD2. It is inferred that direct transformations of some radiation-induced defects into the first TD species occur in the irradiated samples. Radiation-induced complexes giving rise to local vibrational modes in the region 570–577 cm −1 and/or at 729, 733.5 and 745 cm −1 are suggested as possible precursors to the bistable TDs in Ge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
