Abstract
Hydrogenated silicon film is fabricated by plasma enhanced chemical vapor deposition method, and the enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth is investigated. The thermal conductivity of films is measured based on Fourier thermal transmitting law by using platinum electrode. Raman spectroscopy characterization reveals the crystalline volume fraction (Xc) of microcrystalline silicon (μc-Si:H) and demonstrates it is embedded with nanocrystals. Spectroscopic ellipsometry with Forouhi–Bloomer model is used to obtain the thickness of films. The measurement results show that the thermal conductivity of μc-Si:H is much higher than amorphous silicon (a-Si:H).
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