Abstract
In the present work, Si65-xGe31Au4Bx (x = 1, 2, 3, and 4) nanocomposites were synthesized by ball milling and spark plasma sintering to investigate the boron concentration dependence of thermoelectric properties. The electrical resistivity observed for samples made at 2 ≤ x ≤ 4 was almost constant over a wide temperature from 300 K to 1000 K, indicating the strongest scattering limit with disordering. All samples possessed the large Seebeck coefficient, mainly, B-1% and B-3% doped sample shows the significant Seebeck coefficient exceeding 450 μVK−1, which was presumably attributed to a sharp peak in the electronic density of states near the valence band edge. As a result, the largest power factor of 2.1 mWm−1K−2 was observed at x = 3. In addition, the lowest thermal conductivity less than 1.3 Wm−1K−1 was observed for x = 2,3, and 4. The significant power factor, together with low thermal conductivity naturally led to obtain high ZT value of 1.63 at 973 K. This value is much higher than that of previously reported other Si-Ge based nanocomposites.
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