Enhancement of the solar X-ray line intensities due to dielectronic recombination as an excitation process

Abstract

Intensities of resonance lines in X-ray region for Si ix–Si xiv ions are calculated by considering total excitation, i.e., excitation due to electron impact and dielectronic recombination. It is found that the contribution of the latter is quite significant. For consistency, the electron density effect in our calculations is not only accounted for in the ionization equilibrium but also in the total rate of excitation. It is also found that the contribution of electron density effect is pronounced with the inclusion of dielectronic recombination as an excitation mechanism. The computed average line intensities are compared with the available observations and a table of line flux for various wavelengths of the above-mentioned ions at different temperatures is also given.