Abstract
The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the $1\mathit{\text{s}}$ resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.
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