Abstract
We report on persistent spectral hole burning (PSHB) in a silicon-naphthalocyanine doped poly-vinylbutyral film in the presence of electron acceptors such as citral or hexachloroethane. The hole-burning efficiency does not depend on the concentration in 1-color PSHB experiments. The hole growth kinetics reflects the dispersion of the burning rates connected to the distribution of tunnel parameters of the two-level systems coupled to the electronic state of the dye. In 2-color experiments, an increase of the efficiency by a factor 10 compared with 1-color results with no acceptor is achieved with green gating light, the largest increase being observed with C 70 as an acceptor.
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