Abstract
The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
