Abstract
We show that the repulsive core of semiconductor quantum rings enhances the heavy hole-light hole mixing. Calculations for InAs/GaAs quantum rings show that the light hole character of the valence band ground state increases at least by a factor of two as compared to that of quantum dots. The light-hole character becomes comparable to the heavy hole one in quasi-1 D rings. Biaxial strain reduces the light hole influence, but it is still larger than in quantum dots. The effect of strain on the magnetic field response and wave function localization is studied.
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