Abstract
Enhancement of the extent of transfer-free few-layer graphene has been achieved by the introduction of an additional solid carbon source into our silicon-CMOS compatible hydrocarbon CCVD process (1). A fivefold increase of graphene surface coverage is demonstrated by electrical testing of field-effect transistors showing typical few-layer graphene characteristics as have been reported elsewhere (2)(3). Full functionality has been achieved up to a channel length of 10µm. Furthermore, contact-mode conductive atomic force microscopy has been performed, confirming the presence of a conductive surface in the absence of other carbon allotropes like CNTs. However, microscopic electric defects can be seen on this surface. Finally, basic gas sensing properties of a graphene field-effect transistor are presented.
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