Abstract
Using x-ray diffraction, cross-sectional transmission electron microscopy ~XTEM!, and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen ‘‘loss,’’ indicating the occurrence of phase separation after thermal treatment. Highresolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si 3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.
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