Abstract
It is shown that short-term exposure of thin-film electroluminescent structures based on ZnS:Mn films to ultraviolet pulses with energy much lower than the threshold energies for laser annealing of ZnS:Mn films can enhance the brightness and efficiency of the electroluminescence, increase the slope of the brightness-voltage characteristics, improve the operating stability, and increase the electrical safety margin of the structures. It is established that the improvement in the properties of structures is caused by the photostimulation of below-threshold defect annealing processes and impurity diffusion, which lead to redistribution of the Mn ions in the ZnS film and reduce the concentration of shallow states which influence the structural characteristics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
