Abstract
Photoluminescence (PL) measurements on modulation-doped Al x Ga 1− x As/In y Ga 1− y As/GaAs single and step quantum wells were carried out to investigate the interband transitions and to determine the activation energies in In y Ga 1− y As quantum wells. The activation energy of the electrons confined in the step quantum well, as obtained from the temperature-dependent PL spectra, was larger than that of the electrons confined in the single quantum well. The enhancement of the activation energy in the modulation-doped single quantum wells due to an embedded deep step layer originated from an increase in the energy difference between the ground electronic state and the Al x Ga 1− x As conduction band edge in the In y Ga 1− y As quantum well. These results indicate that the activation energy in modulation-doped Al x Ga 1− x As/In y Ga 1− y As/GaAs single quantum wells depends on the electronic structure.
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