Abstract
Enhancement in electrical properties as well as temperature and field coefficient of resistance in Nd0.67Sr0.33Mn1-xRuxO3 (0 ≤ x ≤ 0.10) manganites, prepared by solid state reaction route are studied. The substitution at Mn site by Ru invokes a lower value of TP and also an increment in overall MR. The values obtained for TCR and FCR in compounds Nd0.67Sr0.33Mn1-xRuxO3 (0.05 ≤ x ≤ 0.10) are higher as compared to its parent compound Nd0.67Sr0.33MnO3. For memory devices and bolometer IR detectors with a application point of view, these samples show the maximum magnetoresistance (MR) of 81% at 5 T applied magnetic field, while the temperature coefficient of resistance (TCR) and field coefficient of resistance(FCR) is found to be ∼17% K−1 and ∼30% T-1 approximately.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
