Abstract
Enhancement in electrical properties as well as temperature and field coefficient of resistance in Nd0.67Sr0.33Mn1-xRuxO3 (0 ≤ x ≤ 0.10) manganites, prepared by solid state reaction route are studied. The substitution at Mn site by Ru invokes a lower value of TP and also an increment in overall MR. The values obtained for TCR and FCR in compounds Nd0.67Sr0.33Mn1-xRuxO3 (0.05 ≤ x ≤ 0.10) are higher as compared to its parent compound Nd0.67Sr0.33MnO3. For memory devices and bolometer IR detectors with a application point of view, these samples show the maximum magnetoresistance (MR) of 81% at 5 T applied magnetic field, while the temperature coefficient of resistance (TCR) and field coefficient of resistance(FCR) is found to be ∼17% K−1 and ∼30% T-1 approximately.
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