Abstract
Electric-double-layer transistors (EDLTs), which consist of ionic liquids (IL) as gate dielectrics, have attracted keen interest owing to dramatic modulation of physical properties by high-density carrier accumulation and tuning. In this study, EDLTs based on the superconducting ultrathin FeSe film with multivalent ILs exhibit a great potential for improvement of physical properties at the interface charge accumulation layer. The superior superconducting property found in high-Tc FeSe-EDLT with divalent IL sheds new light on the importance of interface engineering via appropriate selection of ILs.
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