Abstract
The electrical resistivity and the Hall coefficient of 1% In doped Pb 1−XSn XTe (X=0.25) films with Pb precipitates are measured in the range of 1.5 K< T<300 K. In these films, the superconducting transition occurs below 6K because of the proximity effect by Pb grains. By exposure to light, a large photoconductivity excited from In impurity enhances the superconducting transition temperature. The enhancement will be understood by considering that the coherence length of superconductivity in semiconducting region is extended by the photo-carriers.
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