Abstract
Spintronic terahertz (THz) emitters (STEs) based on magnetic heterostructures have emerged as promising THz sources. However, it is still a challenge to achieve a higher intensity STE to satisfy all kinds of practical applications. Herein, we report a STE based on Pt0.93(MgO)0.07/CoFeB nanofilm by introducing dispersed MgO impurities into Pt, which reaches a 200% intensity compared to Pt/CoFeB and approaches the signal of 500 μm ZnTe crystal under the same pump power. We obtain a smaller spin diffusion length of Pt0.93(MgO)0.07 and an increased thickness-dependent spin Hall angle relative to the undoped Pt. We also find that the thickness of a Pt layer leads to a drastic change in the interface role in the spintronic THz emission, suggesting that the underlying mechanism of THz emission enhancement is a combined effect of enhanced bulk spin hall angle and the interfacial skew scattering by MgO impurities. Our findings demonstrate a simple way to realize high-efficiency, stable, advanced spintronic THz devices.
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