Abstract
Co 2 MnSi / Cr / Co 2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L21-ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 mΩ μm2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L21-ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.
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