Abstract
High quality electron cyclotron resonance plasma-enhanced chemical vapor deposition SiO2 film and annealing are investigated in an effort to enhance SiO2/GaAs interface properties. Dramatic reduction of interface state density is achieved by reducing nitrogen and hydrogen impurities in the SiO2 film and optimizing the annealing temperature. A minimum interface state density of 3×1010 eV−1 cm−2 is obtained in SiO2/GaAs annealed at 690 °C for 30 min. Secondary-ion mass spectroscopy data suggest that the reduction in interface state density may be related to the amount of Ga outdiffusion into the SiO2 film.
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