Abstract
Rapid thermal oxidation, in which samples are intensely heated to a preset temperature, is used to grow silicon oxide on Si substrates while avoiding significant diffusion of impurities into the substrate. In previously proposed reaction models for rapid thermal oxidation, the oxidation rate is only determined by the temperature and O2 pressure. Therefore, it is believed that the rate of oxidation at a preset temperature is independent of the initial substrate temperature. In this study, the interfacial oxidation reactions that follow Si(001) surface oxidation were observed using real-time Auger electron spectroscopy. Interfacial oxidation was enhanced when the substrate temperature was increased from temperature T1 to temperature T2 at the end of Si(001) surface oxidation. As a result, strong T1 and T2 dependences of the interfacial oxidation rate were observed. The interfacial oxidation rate at T1 = room temperature was more than 10 times higher than that at T1 = 561 °C, even for the same T2 (682 °C). A...
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