Abstract
Y3Al5-xGaxO12:Ce3+,V3+ (YAG:Ce) has excellent chemical stability and unprecedented luminous efficiency. Its strong photoresponsive property is thoroughly utilized in designing excellent optical information storage device. Here, the remarkable photoconductivity of YAG:Ce is exploited to demonstrate a hybrid YAG:Ce-silicon device that shows high speed terahertz wave spatial modulation. A wide terahertz spectra modulation is observed under different pump powers in frequency range from 0.2 to 1.8 THz. Furthermore, a dynamic control of the terahertz wave intensity is also observed in the transmission system. The modulation speed and depth of the device is measured to be 4 MHz (vs 0.2 kHz)and 83.8%(vs50%) for bare silicon, respectively. The terahertz transmission spectra exhibits highly efficiency terahertz modulation by optically pumping a YAG:Ce film on silicon with low optical pump fluence.
Highlights
Terahertz wave functional devices are widely used in terahertz wireless communication, sensing and imaging systems[1,2,3]
We demonstrate a high speed and photoactive terahertz wave radiation spatial light modulator using the photoinduced conductivity change ofYAG:Ce/Si hybrid structure
The photoexcitation of YAG:Ce layer spin coated on the silicon actively modulates the terahertz wave with a modulation depth of 83.8% and modulation speed of 4MHz under the low laser pumping power of 0.2W/cm[2]
Summary
Terahertz wave functional devices are widely used in terahertz wireless communication, sensing and imaging systems[1,2,3]. We have measured an amplitude modulation of the terahertz transmission in the frequency range from 0.2 to 1.8THz with various laser intensity irradiances.
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