Abstract

Erbium chloride silicate (ECS) nanocrystals and Si nanocrystals (Si NCs) co-embedded in silica films were prepared. And the sensitized luminescence of ECS was realized through interparticle energy transfer (IPET) in solid matrix. We focus on the effect of annealing temperature on the film microstructure and sensitized luminescence. The samples annealed at 1100 °C have a moderate level of energy transfer efficiency and total Er3+ concentration capable of radiative recombination. At the same time, they also have high luminescence intensity of Si NCs. Therefore, the samples annealed at 1100 °C have good sensitizing luminescence performance of ECS. The strong luminescence intensity of sensitizers Si NCs and adjacent crystalline ECS nanocrystals are the keys to achieve excellent IPET in the solid matrix. The results provide a basis for optimizing sensitized luminescence of erbium compounds by regulating annealing.

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