Abstract
The Seebeck coefficients in an MgO-based double-barrier magnetic tunnel junction (DBMTJ) with a semiconductor (e.g., Ge) spacer are studied using non-equilibrium Green’s function formalism in the linear response regime. The DBMTJ results show a magnitude enhancement compared with a single-barrier MTJ (SBMTJ) at the specific thicknesses of the semiconductor spacer due to the resonant tunneling effect through the DBMTJ structure. With an increase of the average temperature of the junctions, the Seebeck coefficients also increase and they are at a maximum in the anti-parallel configuration of the magnetizations. Therefore, it is possible to achieve large Seebeck coefficients using a DBMTJ compared with a conventional SBMTJ structure.
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