Enhancement of Second- and Third-Order Nonlinear Optical Susceptibilities in Magnetized Semiconductors

Abstract

Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility χe[= χ(2)e + χ(3)e E] is obtained for III–V semiconducting crystals in an applied transverse dc magnetic field under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear polarization arising from the crystal properties such as piezoelectricity and electrostriction. Numerical estimates have been made by a representative n-InSb crystal at 77K duly irradiated by a pulsed 10.6-μm CO2 laser under off-resonant transition regime. Efforts are dedicated to optimizing doping level and externally applied dc magnetic field to achieve maximum χ(2)e and χ(3)e. The results are found to be in good agreement with the available literature. The analysis shows that χ(2)e and χ(3)e can be significantly enhanced in doped III–V semiconductors by the proper selection of doping concentration and dc magnetic field, which confirms its potential as a candidate material for the fabrication of nonlinear optical devices.