Abstract
We have demonstrated a Si-based bottom-gate-type spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with an electron inversion channel at room temperature and showed the enhancement of the room-temperature effective spin diffusion length by “spin drift”. Our spin MOSFET was fabricated on a (001)-oriented silicon-on-insulator (SOI) substrate with a p -type ultrathin (8 nm) Si layer, in which the channel length was $1.0~\mu \text{m}$ , the spin injector/detector electrodes were ferromagnetic multilayer (from top to bottom) Fe(4nm)/Mg(1nm)/MgO(1nm) tunnel junctions, and a 200-nm-thick buried oxide layer was used for the gate dielectric. Using various gate electric fields and source-drain electron currents, two types of spin-dependent transport signals were measured: spin-valve signals with an in-plane magnetic field and Hanle signals with an out-of-plane magnetic field. Clear Hanle signals and spin-valve signals were obtained for various bias conditions. We analyzed the Hanle signals and the change of the spin-valve signals based on our original formulas that take into account the distribution of the lateral electric field along the electron transport, and revealed that the spin drift can enhance the effective spin diffusion length by the lateral electric field parallel to the electron transport in the inversion channel. The effective spin diffusion length becomes 3–13 times larger than the intrinsic spin diffusion length ${\lambda }_{\mathrm{ S}}= 0.89\mu \text{m}$ owing to the increase in the lateral electric field. It was confirmed that the spin drift is very useful to achieve larger spin-valve signals in spin MOSFETs with an electron inversion channel.
Highlights
Silicon-based spin metal-oxide-semiconductor field-effect transistors are attractive for nextgeneration electronics on a Si platform, since they can be key devices in nonvolatile memory as well as reconfigurable logic circuits
MOSFETs with an electron inversion channel at room temperature, and quantitatively investigate the spin drift by our experimental results and our original formulas that precisely take into account the distribution of the lateral electric field
At the same EOX, the non-linear increase in the experimental V2T value with increasing IDS indicates that the spin drift was developed in our spin MOSFET, since a linear increase would be obtained if λeSff were unchanged with increasing F
Summary
Silicon-based spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs [1]–[4]) are attractive for nextgeneration electronics on a Si platform, since they can be key devices in nonvolatile memory as well as reconfigurable logic circuits. MOSFETs with an electron inversion channel at room temperature, and quantitatively investigate the spin drift by our experimental results and our original formulas that precisely take into account the distribution of the lateral electric field.
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