Abstract
In this study, the characteristics of the nitride-based blue light emitting diodes (LEDs) having different indium contents multiple quantum barriers were analyzed numerically. The carrier concentrations in the quantum wells (QWs), energy band diagrams, radiative recombinations were investigated. InxGa1-xN with different indium-composition multiple quantum barriers (QBs) instead of GaN QBs were designed to improve hole transport and radiative recombination. The simulation results indicate that LEDs have a better hole transport in the active regions and uniformity of hole concentration over the conventional LED with GaN QBs. Consequently, the luminescence power of proposed structure was enhanced about 60 times at 3.0 V.
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