Abstract
Quantum well intermixing was studied on InP∕InGaAs∕InGaAsP heterostructures under stress induced by a TiOx surface stressor. Results provide a comparison of thermal emission wavelength shift and effective emission wavelength shift for samples intermixed with and without applied stress. It is shown that TiOx decreases the measured thermal shift depending on the amplitude of the induced stress. It is also shown that the diffusion of point defects created during ion implantation prior to TiOx stressor deposition is significantly enhanced. This results in an increase of the effective wavelength shift by up to 300%.
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