Abstract
Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double δ-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra δ-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26071
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