Abstract
The piezoelectric properties of (100)-orientated BiFeO3 thin films grown on (100)LaNiO3/SiO2/(100)Si were investigated. 200-nm-thick LaNiO3 and 250-nm-thick BiFeO3 was deposited by the rf magnetron sputtering method and sol–gel method, respectively. The (100)-oriented BiFeO3 films were distorted to the in-plane tensile direction owing to the low thermal expansion coefficient of the Si substrate. While no significant dependence of the in-plane lattice distortion on the dielectric and ferroelectric properties and d33,AFM piezoelectric coefficient measured by scanning probe microscopy was observed, it was found that the e31,f piezoelectric coefficient increases with increasing the lattice distortion. The maximum e31,f and figure of merit (FOM) were −4.0 C/m and 14 GPa, respectively, which are comparable to those of epitaxially grown (100)BiFeO3 films.
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