Abstract
The side-illumination-enhanced photovoltaic effect has been studied in La0.9Sr0.1MnO3/Si heterojunctions fabricated by laser molecular beam epitaxy. When a He–Ne laser illuminated the La0.9Sr0.1MnO3 film surface, a stable photovoltage was produced and the responsivity is ∼0.17 mV mW−1. An enhancement of the photovoltaic effect occurred when the La0.9Sr0.1 MnO3/Si interface was illuminated directly by side illumination, and the steady responsivity reached ∼6.87 mV mW−1. This work demonstrates an effective way to improve the photovoltaic responsivity of the perovskite oxide heterojunctions.
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