Abstract
We fabricated germanium-based photonic crystal (PhC) slabs and characterized them by photoluminescence (PL) measurements at room temperature. Air-bridge-type Ge PhC slabs showed stronger PL than non-processed Ge layers on SiO 2 and than Ge PhC slabs on SiO 2. This enhancement is attributed to improved extraction efficiency due to the PhC patterns and to suppressed light leakage into the substrate by utilizing the air-suspended structure. In particular, when flat photonic band-edge modes around the Γ point are tuned to the Ge emission range, larger enhancement of integrated PL intensity was observed. A maximum enhancement ratio of integrated intensity up to 22 was demonstrated in an air-suspended Ge PhC slab with appropriate structural parameters. This is the largest enhancement factor of Ge PL using photonic nanostructures reported so far.
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