Abstract
Al doped ZrO2 thin films were deposited on quartz substrates by sol–gel dip coating technique. X-ray diffraction pattern showed the deterioration of the crystallinity of the films with increase in Al doping concentration due to the formation of stress in the film. Scanning electron microscope images showed crack free surface. An average transmittance of >80% (in UV–vis region) was observed for all samples. Optical band gap was found to vary as a function of doping concentration. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in Al doping concentration which is due to the increase in oxygen vacancies in the Al doped films. The “Blueshift” and “Redshift” of the PL spectra with increase in Al concentration originates from the change of stress in the films. The enhancement of PL intensity in the Al doped ZrO2 thin films make it suitable for generation of solid state lighting in light emitting diode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
