Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

Abstract

In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.