Abstract
To date, organic–inorganic metal halide perovskite material has become an emerging research topic for scientists to alternate the semiconductor material in the optoelectronic applications. However, the photoluminescence (PL) efficiency of perovskite material is quite low, which impacts the performance of perovskite-based optoelectronic devices. Here, we propose and demonstrate an effective approach to enhance the PL efficiency of perovskite material. We utilize the metal nanostructures fabricated on the perovskite surface. Metal nanostructures possess extraordinary electromagnetic properties, e.g., easily controlled the amplitude, phase, and polarization of the incident light, which can be utilized to enhance the PL performance of the perovskite material. The intensity and spectral bandwidth of the PL spectrum could be enhanced significantly via metal nanostructures. The full width at half maximum of PL spectral bandwidth could be narrowed to several nanometers. This nanostructure-enhanced PL characterization of the perovskite material exhibits better monochromaticity and provides the simple, cost-effective, and potentially scalable method for the development of high-efficiency light emitting diodes, solar cells, photodetectors, etc.
Highlights
Perovskite material has attracted much attention in recent years, due to the extraordinary optoelectronic properties, such as tunable energy bandgap, high carrier mobility, excellent light absorption, low excitation binding energy, long carrier diffusion length, and charge carrier lifetime.1–4 The organic–inorganic halide perovskite materials were investigated in many fields including but not limited to solar cells, light emitting diodes, photodetectors, lasers, sensors, and field effect transistors.5–10 The composition of the perovskite material is ABX3, where “A” is a monovalent cation, “B” is a divalent cation, and “X” is a halogen, such as chlorine (Cl), bromine (Br), or iodine (I).11–13 A is usually methylammonium (CH3NH3) and B is generally lead (Pb)
We propose and demonstrate an effective approach to enhance the PL efficiencies of perovskite materials by using lithography-free metal nanostructures
G1 samples are the perovskite devices coated with Ag thin-films of 50 nm, 100 nm, and 150 nm thicknesses, respectively
Summary
Perovskite material has attracted much attention in recent years, due to the extraordinary optoelectronic properties, such as tunable energy bandgap, high carrier mobility, excellent light absorption, low excitation binding energy, long carrier diffusion length, and charge carrier lifetime.1–4 The organic–inorganic halide perovskite materials were investigated in many fields including but not limited to solar cells, light emitting diodes, photodetectors, lasers, sensors, and field effect transistors.5–10 The composition of the perovskite material is ABX3, where “A” is a monovalent cation, “B” is a divalent cation, and “X” is a halogen, such as chlorine (Cl), bromine (Br), or iodine (I).11–13 A is usually methylammonium (CH3NH3) and B is generally lead (Pb).
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