Abstract
In this study, a perovskite-based mixed cation/anion ultraviolet photodetector with an added halide material is fabricated using perovskite combined with an ABX_3 structure. Mixed cation/anion perovskite thin films of MAPbI3/FABr are manufactured through a relatively simple solution process and employed as light-absorption layers. In the produced thin film, SnO2–sodium dodecylbenzenesulfonate acts as an electron transport layer and spiro-OMeTAD acts as a hole injection layer. Compared to a single cation/anion perovskite, the fabricated device exhibits phase stability and optoelectronic properties, and demonstrates a responsivity of 72.2 mA/W and a detectability of 4.67 × 1013 Jones. In addition, the films show an external quantum efficiency of 56%. This suggests that mixed cation/anion films can replace single cation/anion perovskite films. Thus, photodetectors based on lead halides that can be applied in various fields have recently been manufactured.
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