Abstract
In the present work, FTO/CdS/CdTe/Te/Al superstrate structured solar cell has been fabricated using thermal evaporation method. A 40 nm thin layer of P-type tellurium has been incorporated between CdTe and back contact to reduce the potential energy barrier by improving the quality of interfaces. The fabricated device characterized using UV–Visible-NIR spectroscopy and I–V measurement. The tellurium interlayer plays a vital role in enhancing the performance of the device. The fabricated device generated open circuit voltage (Voc) of 0.7 V.
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